IndiumV3, Main, Repository, bibRecord, 000937

Luminous Efficiency of Axial InxGa1-xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials

Identifieur interne : 000937 ( Main/Repository ); précédent : 000936; suivant : 000938

Luminous Efficiency of Axial InxGa1-xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials

Auteurs : RBID : Pascal:13-0255328

Descripteurs français

Pascal (Inist)
- Semiconducteur III-V, Composé III-V, Nanofil, Nanomatériau, Hétérostructure, Potentiel polarisation, Potentiel surface, Continuum, Théorie élasticité, Propriété mécanique, Propriété électronique, Distribution contrainte, Champ déformation, Niveau Fermi, Nitrure d'indium, Nitrure de gallium, Structure électronique, Ancrage, Simulation numérique, Matériau piézoélectrique, Epaisseur couche, Trempe, Photoluminescence, InxGa1-xN, GaN, CaSe, 8107V, 8107B, 6225, 7321.

English descriptors

KwdEn :
- Continuum, Digital simulation, Elasticity theory, Electronic properties, Electronic structure, Fermi level, Gallium nitride, Heterostructures, III-V compound, III-V semiconductors, Indium nitride, Layer thickness, Mechanical properties, Nanostructured materials, Nanowires, Photoluminescence, Piezoelectric materials, Pinning, Polarization potential, Quenching, Strain distribution, Stress distribution, Surface potential.

Abstract

Using continuum elasticity theory and an eight-band k.p formalism, we study the electronic properties of GaN nanowires with axial In_xGa_1-xN insertions. The three-dimensional strain distribution in these insertions and the resulting distribution of the polarization fields are fully taken into account. In addition, we consider the presence of a surface potential originating from Fermi level pinning at the sidewall surfaces of the nanowires. Our simulations reveal an in-plane spatial separation of electrons and holes in the case of weak piezoelectric potentials, which correspond to an In content and layer thickness required for emission in the blue and violet spectral range. These results explain the quenching of the photoluminescence intensity experimentally observed for short emission wavelengths. We devise and discuss strategies to overcome this problem.

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Le document en format XML

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N/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials</title>
<author><name sortKey="Marquardt, Oliver" uniqKey="Marquardt O">Oliver Marquardt</name>
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<term>Photoluminescence</term>
<term>Piezoelectric materials</term>
<term>Pinning</term>
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<front><div type="abstract" xml:lang="en">Using continuum elasticity theory and an eight-band k.p formalism, we study the electronic properties of GaN nanowires with axial In<sub>x</sub>
Ga<sub>1-x</sub>
N insertions. The three-dimensional strain distribution in these insertions and the resulting distribution of the polarization fields are fully taken into account. In addition, we consider the presence of a surface potential originating from Fermi level pinning at the sidewall surfaces of the nanowires. Our simulations reveal an in-plane spatial separation of electrons and holes in the case of weak piezoelectric potentials, which correspond to an In content and layer thickness required for emission in the blue and violet spectral range. These results explain the quenching of the photoluminescence intensity experimentally observed for short emission wavelengths. We devise and discuss strategies to overcome this problem.</div>
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N/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials</s1>
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Luminous Efficiency of Axial InxGa1-xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials

Luminous Efficiency of Axial InxGa1-xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials

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